Abstract
The phenomenon of photodeposition of silver has been detected in CdSe-As2S3:Agx (x=0.9–2.4) heterojunctions. The mass transfer of silver ions to the interface is caused by an electric field arising due to separation of electron-hole pairs in the space-charge regions of the heterojunction upon photovoltage generation. The migration of ions is also stimulated by their entrainment by the electron flow. Recombination of electrons with ions at the interface causes photodeposition of clusters of a chemical element responsible for ionic conduction in the solid electrolyte. A new method is suggested for preparing materials for optical data storage. The method is based on the phenomenon of photostimulated transport of ions and photodeposition of a metal at the interfaces of heterojunctions based on solid electrolytes.
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