Abstract

Photodegradation of gas phase benzene by SnO2 nanoparticles has been studied in humid air, dry air and N2 by using a tubular photoreactor. The SnO2 nanoparticles are synthesized by the oxidation of anhydrous stannic chloride (SnCl4) in a propane/air turbulent flame. Direct hole oxidation and the ·OH radical mechanisms have been discussed based on experimental results. The goal of this research is to explore a viable and efficient alternative photocatalyst and photocatalytic process, in particular, for humidity-tolerant photocatalyst or photocatalytic process in environmental applications.

Highlights

  • Advanced oxidation processes (AOP) including ultraviolet (UV) radiation, ozone, hydrogen peroxide and/or catalyst, or their combinations are commonly used to clean biologically toxic or non-degradable materials such as aromatics, pesticides, dyes, antibiotics, and volatile organic compounds in waste water and polluted air [1]

  • Semiconductor PCO technology has the merits of photocatalytic oxidation at ambient temperature and pressure under sunlight or low-cost UV lamp

  • The X-ray diffraction (XRD) pattern indicates that the SnO2 nanoparticles have a tetragonal rutile structure shown

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Summary

Introduction

Advanced oxidation processes (AOP) including ultraviolet (UV) radiation, ozone, hydrogen peroxide and/or catalyst, or their combinations are commonly used to clean biologically toxic or non-degradable materials such as aromatics, pesticides, dyes, antibiotics, and volatile organic compounds in waste water and polluted air [1]. AOP are designed to produce hydroxyl radicals, converting contaminant materials into stable inorganic small molecules such as water, CO2 and inorganic salts to a large extent [1]. The most widely applied AOP are H2 O2 /UV, O3 /UV, H2 O2 /O3 /UV, Fenton, and photocatalytic oxidation (PCO) technology [1]. Semiconductor PCO technology has the merits of photocatalytic oxidation at ambient temperature and pressure under sunlight or low-cost UV lamp. The obtained electron-hole pair, after migration to the surface of semiconductor, can react with hydroxyl groups to form hydroxyl radicals, which react with contaminants and degrade them

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