Photocurrent spectroscopy of GaInNAs and GaInNAs(Sb) strained quantum wells grown by molecular beam epitaxy

Abstract

We have investigated the interband transitions in strained GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells (QWs) using absorption spectra. The experimental data are compared with a calculation in the envelope function formalism taking into account the effects of strain and the bandgap lowering due to the strong coupling between nitrogen-localized states and the extended states of III–V conduction band. The results are consistent with a type I band alignment and a conduction band offset ratio of about 80%. They also indicate an increased electron effective mass in III–V–N QWs in comparison with III–V materials. QW gap in the 1.5 μm range is achieved on the GaAs substrate using GaInNAsSb/GaAsSbN single QW.