Abstract
Photocurrent spectra of a 50 Å period superlattice (SL) of GaAs Al .3Ga .7As , were measured in the range 14–300 K in a low electric field regime. The energy gap between the heavy-hole and electron extended states of the SL shows the same dependence on temperature as its bulk components. The decrease of photocurrent in the range 100–300 K indicates transport in the extended states of the SL. Different photo-ionization of DX centres existing in the n-doped layers of Al .3Ga .7As causes an effective asymmetry in the n-i-n structure.
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