Photocurrent spectroscopy for quantum-well intermixed photonic integrated circuit design

Abstract

Photocurrent spectroscopy is used to characterize band edges in quantum-well intermixed InGaAsP material lattice matched to InP. The band edge absorption data is used as a design tool to predict the dc performance of electroabsorption modulators, and is shown to agree well with data obtained from actual devices. In addition, we demonstrate the presence of an exciton peak in InGaAsP quantum wells, and present its evolution as a function of quantum-well intermixing and reverse bias voltage.