Abstract
A mechanism behind the saturation of the photocurrent and occurrence of negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions is found. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M structures are studied with a model of back-to-back diodes. Photocurrent-voltage characteristics are taken at high constant and pulsed applied biases. It is found that the nonlinearity of the photocurrent-voltage characteristics and photoconductivity kinetics are due to the quenching of photoconductivity by Joule self-heating.
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