Abstract
High electron mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures appear as a new technology which can deliver record current densities. Ultraviolet (UV) photodetectors based on ungated InAlN/GaN NR HEMT structures have a gain in the range of the 105–107, a sublinear behaviour with the excitation power and a UV/visible contrast of more than three orders of magnitude. In spite of the larger surface-to-volume ratio, sublinearities and persistent photocurrent effects are less intense in NR structures compared to planar devices, and they decrease at higher excitation power. The asymmetric NR morphology does not induce a preferential coupling of polarized light in the NR structure; since light is mostly absorbed in the GaN buffer layer and photogenerated charges are efficiently collected by the HEMT channel.
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