Abstract
Photocurrent multiplication, with a rate reaching 3,000-fold, was first achieved at an organic heterojunction between p-type phthalocyanine (CuPc) and n-type perylene pigment (Me-PTC) layers. Multiplication is caused by the tunneling injection of holes through the Me-PTC layer, which is triggered by the accumulation of trapped electrons at the CuPc/Me-PTC heterointerface. A comparative study of photocurrent multiplication at the heterojunction between the hole transporting layer (HTL) and n-type organic semiconductor (n-OSC) and that between the electron transporting layer (ETL) and p-type organic semiconductor (p-OSC) was also conducted. The multiplication mechanism of HTL/n-OSC and that of ETL/p-OSC showed front and back relationship; that is, the bias polarities are (−)HTL/n-OSC(+) and (+)ETL/p-OSC(−), the types of trapped carriers are holes and electrons, and the directions of tunneling injection of electrons are from HTL to n-OSC and from p-OSC to ETL, for HTL/n-OSC and ETL/p-OSC, respectively. Further, a structural trap model for organic heterojunctions was proposed.
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