Abstract

A differential electroluminescence imaging method for solar cells which yields local photocurrent collection efficiency maps is introduced. These maps attribute a value between zero and unity to each location on the cell. This value corresponds to the ratio between the current at the cell terminals and the locally generated photocurrent. The method is demonstrated for a multicrystalline silicon solar cell under constant illumination. If the point of maximum power output of the cell is chosen as the bias point, the method yields quantitative information on the local contribution to the maximum output power of the solar cell.

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