Abstract
Photoconductivity (PC) in GaN/AlN quantum dot (QD) matrix due to in-plane transport is characterized. When exposed to near infrared (NIR) radiation a peak is observed at 1.4 |am. Based on its energy and the polarization dependence, it is associated with the polarized S to Pz intra-band transition in the QDs. This PC signal turns from positive to negative as temperature is raised, increasing exponentially from 50K to 300K. UV excitation at 2.8 eV renders a positive PC at all temperatures, and when combined with NIR radiation, negative PC is observed even at 12 K. We claim that following NIR excitation the electrons get trapped in deep levels in the AlN barrier, from which the UV radiation re-excite them into the QDs.
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