Abstract
Single crystal GeSe2 nanobelts (NBs) were successfully grown using chemical vapor deposition techniques. The morphology and structure of the nanostructures were characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffractometry, and Raman spectroscopy. Electronic transport properties, photoconductive characteristics, and temperature-dependent electronic characteristics were examined on devices made of individual GeSe2 nanobelt. The current increased by three orders of magnitude upon laser irradiation (wavelength 532 nm and intensity ∼6.8 mW/cm2) with responsivity of ∼2764 A/W at fixed 4 V bias. Localized photoconductivity study shows that the large photoresponse of the device primarily occurs at the metal-NB contact regions. In addition, the electrically Schottky nature of nanobelt/Au contact and p-type conductivity nature of GeSe2 nanobelt are extracted from the current-voltage characteristics and spatially resolved photocurrent measurements. The high sensitivity and quick photoresponse in the visible wavelength range indicate potential applications of individual GeSe2 nanobelt devices in realizing optoelectronic switches.
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