Abstract
Photocurrent and photoluminescence excitation spectra of GaAs/AlGaAs quantum wells exposed to an electric field perpendicular to the layers have been studied at different temperatures between 8 and 300 K. Strong quenching of the photoluminescence and a corresponding increase of the photocurrent is found for a 5 nm single quantum well at electric fields of ≈ 5 × 10 4 V/cm. The field mainly changes the number of carriers decaying via the radiative recombination channel whereas the respective recombination mechanisms are almost field independent. It is shown that photocurrent excitation spectra reveal the same features as observed in photoluminescence spectroscopy at low temperatures. In contrast to photoluminescence, the photocurrent spectrum can be easily recorded at room temperature. The independence of low-temperature equipment and the extremely high sensitivity distinguish photocurrent excitation spectroscopy as a versatile tool for characterization of quantum well structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
