Abstract
We have simultaneously measured photocurrent (PC) and photoluminescence (PL) in GaAs solar cells, including InGaAs/GaAs multiple quantum wells (MQWs) in order to clarify the optimum structure for MQW solar cells. MQW solar cells with shallow wells, for which the carrier escape probability η is calculated to be unity, exhibit a sharp rectifying PC profile. On the other hand, those with deep wells, in which η is nearly zero, exhibit degraded PC-voltage curves and strong PL from the MQWs. From these experimental results, it was found that the introduction of shallow wells with η=1 is essential to prevent degradation of cell performance and is expected to improve the conversion efficiency of MQW solar cells.
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