Abstract
We present photocurrent, capacitance, and photoluminescence studies of GaAs-based Schottky barrier structures incorporating InAs self-assembled quantum dots. We show that the photocurrent is mainly controlled by thermal escape of electrons out of the dots and is suppressed at low temperatures, below 100 K. At higher temperatures (g185 K), we are able to control the magnitude of the photon absorption, and hence the photocurrent, by varying the bias voltage applied to the device.
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