Abstract
Spectral dependences of lateral photoconductivity ofSi1−xGex heterostructures with Ge nanoislands were investigated at 77 and 290 K. It issupposed that the photocurrent in the range 0.81–1.02 eV at 290 K is conditioned by anonequilibrium carrier generated by interband transitions in Ge nanoislands.Si1−xGex heterostructures with Ge nanoislands showed lateral photocurrent in the range from 0.32to 1.2 eV at 77 K. Such a photocurrent is explained by hole transitions from thelocalized states of light and heavy holes in Ge nanoislands into the delocalizedstates of the valence band. It was found that the valence bandgap offset of theheterojunction between the nanoislands and strained c-Si surrounding was 0.48 eV.
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