Abstract
The photoconductivity of Si films after blue multi-laser diode annealing (BLDA) has been investigated for photosensor applications. It was found that, as the laser power increases from 4 to 6 W, the crystal structure changed from micrograins to large grains, and that the photoconductivity increases. After sintering the Si films in H2/N2 (4%) ambient at 450 °C, a photosensitivity ratio of 94 was obtained under white light exposure of 100 mW/cm2 for the Si film after the BLDA at 6 W owing to the reduction in the defects density in the Si films. These results suggest that BLDA is promising for photosensor applications in a multifunctional system on panels.
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