Abstract
The investigation of the influence of Cs alloy on recombination processes has been carried out for the pyrolytic CdS films. The effect of photomemory has been observed for such structures, both pure and alloyed. Cs impurity introduction leads to a five- to tenfold photocurrent increase in comparison with pure samples. It also leads to increase of the nonequilibrium conductivity relaxation time from 300 to 104 s. The stored conductivity is due to the present of the internal potential barriers between the different conductivity areas, which are related with the heterogeneity of the investigated polycrystalline structures. Here, the non-equilibrium conductivity relaxation kinetic of alloyed CdS films corresponds to the case of square-law recombination. It is determined that the potential barrier increases from 0.33 to 0.44 eV along the nonequilibrium conductivity relaxation.
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