Abstract
Polysilanes are both photoreactive and photoconductive materials owing to their σ-conjugated electrons. We investigate transient behavior of photocurrent under UV irradiation in photomodified poly(dimethylsilane) vacuum deposited films. Slow increase of photocarrier generation accompanied with photoscission of the conjugation is observed, which is significantly enhanced in an oxygen atmosphere. This increase can be explained by accelerated dissociation of excitons, assuming charge transfer to acceptors from metastable Si dangling bonds that are created under the irradiation and disappear upon annealing.
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