Abstract
InAs/GaAs multilayered heterostructures containing dense arrays of the low-defect partially relaxed InAs nanoclusters larger than defect-free quantum dots are fabricated by metal-organic chemical vapor deposition in an atmospheric-pressure reactor. The structures have intense photoconductivity in the wavelength range of 1–2 μm at room temperature. The detectivity of fabricated prototypes of photodetectors is D* = 109 cm Hz1/2 W−1. The relaxation time of photoconductivity at a wavelength of 1.5 μm is less than 10 ns.
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