Abstract
Several levels which develop in GaAs before and after proton irradiation were derived from the photoconductivity spectra. It is assumed that the majority of the levels which are observed after irradiation are related to uncontrollable impurities or to impurities which are activated during irradiation. The GaAs ∶ Cu samples were used to show that it is possible to activate admixtures by proton irradiation. It was established that the absolute photoconductivity is reduced during irradiation by the development of recombination centers. The average activation energy of these centers was estimated at 0.06 eV. Lattice defects are the recombination centers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
