Abstract
Long-range potential fluctuations that modulate the band edges significantly affect the dc and ac photoconductivities in a-Si:H and a-Ge:H. The so-called μτ-product and the dielectric relaxation time in the temperature range between 20 and 300 K are obtained in the present materials. The magnitude of potential fluctuations estimated from the dc and ac conductivities is almost consistent with that from the thermoelectric power.
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