Abstract
Photoconductivity measurements as a function of the temperature and light intensity were carried out on samples of hydrogenated and halogenated silicon films. The samples were deposited by r.f. glow discharge starting from a mixture of silicon tetrachloride and hydrogen.Experimental data were analysed by using a theoretical model which assumes a density of states distribution having two exponential band tails and two gaussian distribution of states in the mobility gap.The model predicts a dependence of the photoconductivity as a function of the light intensity which agrees very well with the experimental one.
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