Abstract
High voltage photoconductive switches utilizing polycrystalline ZnSe mere investigated. Experiments have been performed on polycrystalline ZnSe switches in a longitudinal geometry. Electrodes of perforated metal films, a transparent liquid electrolyte, plasma, and ultraviolet-light-generated carriers were used. High-bias fields of up to 100 kV/cm and current densities over 100 kA/cm/sup 2/ can be applied to the polycrystalline ZnSe switches. Nonlinear effects were observed at high fields with near band edge illumination. Applications of these effects are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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