Abstract

Steady-state photoconductivity was studied in thin films of poly[[ o-(trimethylsilyl)phenyl]acetylene], or poly( o-Me 3SiPA) sandwiched between SnO 2 and metal electrodes. Both the dark current density ( J d) and photocurrent density ( J ph) depend superlinearly on the applied electric field. J ph also shows a superlinear dependence on light intensity. However, J d and J ph are only weak functions of temperature at temperatures below room temperature. We conclude that the photoconductivity in poly( o-Me 3SiPA) arises mainly from trap-modulated carrier photoemission from electrodes and the polymer is capable of effective transport of holes.

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