Abstract
The decrease in photodiode R 0 A with incident photon flux is attributed to photoconductivity of the junction depletion region. A theoretical model is developed for the photoconductive shunt resistance, and analytic equations are derived for the photodiode I- V characteristics and R 0 A products. Calculations based on the photoconductive model are in excellent agreement with published data for indium antimony (InSb) and long-wavelength mercury cadmium telluride (HgCdTe) photodiodes. The model is used to calculate the background-limited R 0 A of front- and back-illuminated, medium- and long-wavelength infrared photodiodes. The impact of photoconductivity on photodiode signal and noise are discussed.
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