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Abstract
Films of CdSxSe1-x with different x values (0<x<1.0) were deposited on glass substrates by co-evaporating CdS and CdSe using the two-zone hot wall technique. Films were highly resistive and polycrystalline in nature with partially depleted grains. Photoconductivity and dark conductivity of the films were measured in the temperature range 230-430 K. Data were analysed by utilizing the grain boundary trapping model with monovalent trapping states to determine the barrier height at the intercrystalline boundary. The variation of barrier height with intensity of the incident photons was studied.
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