Abstract
A thin film of copper phthalocyanine (CuPc), a p-type semiconductor, was deposited by thermal evaporation in vacuum on an n-type gallium arsenide (GaAs) single-crystal semiconductor substrate. Then semi-transparent Ag thin film was deposited onto the CuPc film also by thermal evaporation to fabricate the Ag/p-CuPc/n-GaAs/Ag cell. Photoconduction of the cell was measured in photoresistive and photodiode modes of operation. It was observed that with an increase in illumination, the photoresistance decreased in reverse bias while it increased in forward bias. The photocurrent was increased in reverse bias operation. In forward bias operation with an increase in illumination, the photocurrent showed a different behavior depending on the voltage applied.
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