Abstract
InP nanocrystals were prepared by an economic chemical reaction. A very high density of surface states is found at 0.5 eV below the intrinsic conductive band edge. Mixing these InP nanocrystals with MEH-PPV, obtained the composite. Devices with structure ITO/composite(MEH-PPV)/Al were fabricated and investigated. Photocurrent spectra showed that the interface between a conjugated polymer and a semiconductor nanocrystal can be used to provide efficient charge separation for neutral excitons on both the ground states and excited ones. Incorporation of nanocrystals, the conductivity of diode shows large improvements.
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