Abstract
We show that ion-damaged GaAs may be used to detect millimeter electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 1014 cm−2 protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of a reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of ohmic contacts with the ion-damaged semi-insulating GaAs.
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