Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration

Abstract

We present our studies on both photoconductive (PC) and electro-optic (EO) responses of (Cd,Mg)Te single crystals. In an In-doped Cd0.92Mg0.08Te single crystal, subpicosecond electrical pulses were optically generated via a PC effect, coupled into a transmission line, and, subsequently, detected using an internal EO sampling scheme, all in the same (Cd,Mg)Te material. For photo-excitation and EO sampling, we used femtosecond optical pulses generated by the same Ti:sapphire laser with the wavelengths of 410 and 820 nm, respectively. The shortest transmission line distance between the optical excitation and EO sampling points was 75 μm. By measuring the transient waveforms at different distances from the excitation point, we calculated the transmission-line complex propagation factor, as well as the THz frequency attenuation factor and the propagation velocity, all of which allowed us to reconstruct the electromagnetic transient generated directly at the excitation point, showing that the original PC transient was subpicosecond in duration with a fall time of ∼500 fs. Finally, the measured EO retardation, together with the amount of the electric-field penetration, allowed us to determine the magnitude of the internal EO effect in our (Cd,Mg)Te crystal. The obtained THz-frequency EO coefficient was equal to 0.4 pm/V, which is at the lower end among the values reported for CdTe-based ternaries, apparently, due to the disorientation of the tested crystal that resulted in the non-optimal EO measurement condition.