Abstract
UV irradiation with a photon energy higher than 4.0–4.5 eV activates the oxidation of a tellurium surface, which causes photoconduction in the UV region higher than 2.5 eV. For tellurium films 100 nm in thickness, photo-oxidation for 9 h converts the tellurium surface to a protective oxide layer which makes further oxidation difficult. Photoconduction arises from the coexistence of the oxide layer and substrate tellurium, and the value of the photocurrent is determined by the condition of their interface. On the basis of the above results, the possible mechanisms of photoconduction on photo-oxidized tellurium films are briefly discussed.
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