Abstract
AbstractA modulated photocurrent in CdS crystals is obtained by irradiation with an intensity modulated electron beam. The experimental set‐up for the irradiation is described. From the frequency dependence of the ac photocurrent a relaxation time τR is defined. τR decreases with increasing irradiation intensity B. At complete filling of the traps it reaches the value of the free electron lifetime τ. From the dependence τR(B) the approximate depth and the concentration of the traps, which are involved in the relaxation processes, are determined to Ec − EH = 0.215 eV and H = 8.5 × 1014 cm−3.
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