Photochemical wet etching of (0 0 1) plane ß-phase Ga2O3, and its anisotropic etching behavior

Abstract

The photochemical (PC) wet etching behavior of (001) plane β-phase Ga2O3(β-Ga2O3)single crystal was investigated using potassium hydroxide etchant solution under ultraviolet illumination in the temperature range of 80–95 °C. The etch rate was 1.65 nm/min at 80 °C, and increased up to 4.88 nm/min at 95 °C. The etch rate of the (001) plane β-Ga2O3shows strong temperature dependence with the activation energy of 0.798 eV. The PC wet etching characteristics of the (001) plane β-Ga2O3was compared with those of (2¯01) and (010) plane β-Ga2O3. The etch rates increased in order of the (010), (2¯01), and (001) plane, which is accordance with the increasing surface energy trend. The oval line-shaped grooves aligned along [010] direction were observed on the etched (001) plane β-Ga2O3 crystal surface after 30 min. PC wet etching at 80 °C.