Abstract
Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied. Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed. Analysis through atomic force microscopy and time-resolved photoluminescence measurements show that wider bandgap of InGaN, larger specific surface area and more proportion of photocarriers diffusing to the surface before recombination are propitious to photodegradation.
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