Abstract
We report a remarkable photoinduced relaxation process and its dependence of thickness and temperature in mixed-phase BiFeO3 films grown on (001) LaAlO3 substrates. When the films are illuminated by the light above the bandgap, their resistances are reduced with the increase of temperature. The photoinduced change of resistance reaches to the maximum of about 2.17 × 105% at 300 K. It is noted that the relaxation processes of the resistance are significantly different between T-like phase and T-R mixed phase due to structural strain, symmetry breaking and built-in electric field at the phase boundaries. These results provide more insights into intrinsic mechanisms of mixed-phase multiferroic materials and potential applications in all-oxide photoelectric devices.
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