Abstract

AbstractIntrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The substrate temperature of the amorphous film, crystalline silicon surface cleaning schemes, and the native oxide etchant were varied. The transport parameters of the amorphous-crystalline silicon heterostructures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements. PCR bulk lifetime estimates were obtained using the quinhydrone in methanol solution to passivate the crystalline silicon surface. We present the effectiveness of the PCR system in evaluating different surface passivation schemes.

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