Abstract
Industrial n-type Si wafers were H+-ion-implanted and the electronic transport properties were studied using photo-carrier radiometry (PCR). A fitting procedure was introduced using a relatively simple 2-layer PCR model in lieu of the more realistic but substantially more complicated 3-layer model. It was found that the 2-layer model provides an optimal tool for characterizing H+ ion implants, balancing accuracy, complexity and validity as compared to the simpler, but inaccurate, 1-layer model.
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