Abstract
The direct photocarrier generation edge of directly synthesized trans-polyacetylene was studied by means of electric field, temperature and excitation photon energy dependence of photocarrier generation efficiency. We found that the excited states have an energy barrier to generate the charged carrier at the absorption edge and the direct barrierless photocarrier generation starts at about 1.7 eV. These results strongly support the existence of the exciton state at the absorption edge in trans-polyacetylene.
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