Abstract
The optical properties of molecular beam epitaxy grown short period Si 4Ge 5 strained-layer superlattices (SLSs) were studied using junction space charge techniques. Photocapacitance measurements of these samples indicate that the spectral distribution deviates from the normal smooth curve and exhibits a structure. The oscillatory nature of the peaks is well pronounced in the region close to the threshold energy of the photoionization cross-section spectrum and attributed to point defects in the superlattice region. The peaks observed in the spectral distribution exhibit an electric field dependence, and hence the shift in energy of the peaks is discussed in terms of a field-induced localization of the SLS states, which follow the Wannier-Stark ladder in the energy spectrum.
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