Abstract
Transitions of the deep O donor in a GaP p-n junction are studied by photocapacitance. It is found that the O donor may deeply trap either one or two electrons. The four optical absorption cross sections are measured for the two states, and from this information the O concentration profile is determined. The concentration ranges from (4 ± 1) × 1014 cm−3 on the n side to (1.5 ± 0.2) × 1016 cm−3 on the p side of the junction depletion layer. It is believed that these measurements represent the first direct determination of the concentration of O donors in GaP.
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