Abstract
Photocapacitance measurements have been applied to characterize deep impurities present in bulk-grown single crystals of n-type GaAs:O and GaAs:Cr. Three principal defects in GaAs:O have levels located at ( E c − 0.79 eV), ( E v + 0.40 eV) and ( E c − 0.46 eV); the first of these corresponds to the level commonly associa with oxygen and agrees well with the Lucovsky model for photoionization spectrum. The Cr level in GaAs:Cr does not follow the Lucovsky model and appears to undergo “lattice relaxation” during optical transitions.
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