Abstract
The photocapacitance method is applied to the n-type GaAs crystal in which the excess arsenic atoms are introduced by the 67 h annealing at 900 °C under extremely high arsenic vapor pressure of 1950 Torr. The ion density photocapacitance spectra and the temperature dependencies of the photoinduced ion density measurements reveal two photoquenching levels with different level positions and thermal recovery temperatures, respectively.
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