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Abstract
The peculiarities of the photocapacitance effect in dry processed Cu2S-CdS heterojunctions have been investigated. The light flux dependence of capacitance is analysed. The main effect of low-level illumination is the narrowing of the 'intrinsic' layer that is formed as a consequence of Cu diffusion from the Cu2S layer. It was found that, in photocapacitance effects, a major role is played by the intermediate recombination centres present in the near-interface region.
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