Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence

Abstract

The fundamental aspects of the electrochemical etching of lightly doped n-Si under backside illumination conditions are studied in a solution with a low HF concentration and a high concentration of hydrogen peroxide. The data obtained are compared with those for a control electrolyte containing no H2O2. The morphology of the self-organized macropores, their growth rate, porosity, effective valence, and the amount of dissolved silicon are examined in relation to the applied voltage. The anodization kinetics at low and high bias voltages is analyzed. It is found that, under the same illumination, the initial photocurrent in the peroxide electrolyte is approximately twice lower than in the aqueous electrolyte, which makes it possible to state that the quantum efficiency of the photocurrent is lower. As, however, the etching duration is made longer, the current in the peroxide electrolyte strongly increases to become higher than that in the control electrolyte based on H2O. It is found that, in the presence of H2O2, the depthwise growth rate of the macropores increases by more than a factor of 2, and the porosity decreases. The vertical macropore channels have a diameter smaller than that for macropores formed in the aqueous electrolyte and their walls are poorly passivated, which causes branching and the formation of secondary mesopores, the number of which grows with increasing voltage. The effective valence of silicon dissolution in the presence of H2O2 decreases to less than 2. The results are interpreted in terms of the Gerischer and Kolasinski models.