Abstract
A photoactivated birefringence has been observed in an antiferroelectric lead zirconate titanate (PZT) thin film material bounded by an indium-tin oxide (ITO) electrode. This phenomenon stemmed from the ultraviolet (UV) assistance to an antiferroelectric-to-ferroelectric structural transition which otherwise was inhibited by an effect of the lead zirconate titanate (PZT)-ITO interface. The UV-assisted structural transition was accompanied by a significant change in the birefringence of the PZT thin films. Using this phenomenon, an UV-addressed visible-light modulation was demonstrated with an ITO/PZT/Pt thin film structure on silicon substrates.
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