Abstract
Based on bending vibrations model method and also construction of multilayer transducer, which allow the measurements of thermal conductivity for porous layer on Si wafer is proposed. Time dependence of photoacoustic signal under rectangular modulation of exciting light was numerical modeling. The experimental tests were done on the samples of porous silicon on Si wafers as well as for the porous silicon free standing layers, obtained under the same anodization regime. The value of thermal diffusivity of the porous silicon layer correlates well with the value of thermal diffusivity of the porous silicon free layer, determined by TDC method.
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