Abstract
GaAsBi/GaAs nanowires (NWs) grown on Si substrate and proper reference samples have been studied by photoacoustic (PA) spectroscopy. It has been shown that PA signal originating from NWs is quite strong and can be easily identified in the PA spectra, as well as distinguished from the signal originating from the Si substrate. The absorption edge of GaAsBi/GaAs and GaAs NWs has been determined from the analysis of amplitude PA spectra to be 1.26 eV and 1.42 eV, respectively. These values are consistent with the band gap reduction resulting from the introduction of ∼2% Bi in bulk GaAsBi alloy. The presented results prove that, despite light scattering, which is typical for NWs, PA spectroscopy is an excellent tool to study the absorption edge in semiconductor NWs.
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