Abstract
Photoacoustic (PA) spectra on ZnO and CdO compound semiconductor sintered at 600°C for 24 h in glass tube were measured. CdO concentration was changed from 0% to 10% (0, 1, 3, 4, 5, 7 and 10% CdO) and CdO (99.9% purity) powder was also measured for comparison. The PA spectra were constructed from the PA signals of Zn1-xCdxO at the short wavelength region and those of CdO above 450 nm. Using the PA spectra below 450nm, the Cd contents dependence of the band gap of Zn1-xCdxO can be estimated. The band gap was modulated below 5% CdO samples and not changed above 5% CdO samples because the maximum CdO concentration might be between 5% and 7%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Japan Society of Powder and Powder Metallurgy
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
