Abstract
The possibility of determining thermal and transport properties of thin film /spl beta/-SiC on Si substratum was investigated using a photoacoustic method with heat transmission detection configuration. The type of the crystal structure of thin film /spl beta/-SiC was determined by the X-ray technique. Photoacoustic (PA) phase and amplitude spectra were measured and analyzed in the case when first the /spl beta/-SiC side was exposed to a frequency modulated laser beam and then the silicon substratum side was illuminated with a chopped light beam in the case where the SiC surface was in front of the detector-an electret microphone. The experimental results were numerically analyzed.
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