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Abstract
The calculation of the photoabsorption spectra and quantum efficiency of Si-SiGe quantum-well (QW) detectors are presented, with the effects of depolarization and electron-electron exchange interaction taken into consideration. We show that the Si-SiGe QW detectors possess lower dark current, lower tunneling rates, and better photoabsorption characteristics when compared to GaAs-AlGaAs photodetectors. These imply that Si-SiGe QW detector performance characteristics are superior to GaAs-AlGaAs QW infrared photodetectors in addition to its advantage of compatibility with Si-readout circuity.
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